6N65 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
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Наименование прибора: 6N65
This Article Shows A Detailed And Clear Explanation Of MOSFET Working, Structure, Analysis, Example, Applications, Benefits And Many Others. The metal-oxide semiconductor field-effect transistor (MOSFET) is a semiconductor device controllable by the gate signal (g 0).
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 125 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Mosfet Circuit Examples
Максимально допустимый постоянный ток стока |Id|: 6.2 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 100 ns
Выходная емкость (Cd): 95 pf
Free euchre download mac. Сопротивление сток-исток открытого транзистора (Rds): 1.1 Ohm
Тип корпуса: TO-220TO-251TO-252TO-220FTO-220F1
6N65 Datasheet (PDF)
0.1. stb16n65m5 std16n65m5.pdf Size:1032K _st
STB16N65M5STD16N65M5N-channel 650 V, 0.270 , 12 A MDmesh V Power MOSFETin DPAK, DPAKFeaturesVDSS @ RDS(on) Type IDTJmax max.STB16N65M5710 V
0.2. stp16n65m5 stu16n65m5 stw16n65m5 sti16n65m5 stf16n65m5 2.pdf Size:994K _st
STF16N65M5, STI16N65M5STP16N65M5,STU16N65M5,STW16N65M5N-channel 650 V, 0.270 , 12 A MDmesh V Power MOSFETin TO-220FP, TO-220, IPAK, I2PAK, TO-247FeaturesVDSS @ RDS(on) Type IDTJmax max33 322 21STF16N65M51 1TO-220STI16N65M5 TO-247 TO-220FPSTP16N65M5 710 V
0.3. std16n65m2.pdf Size:938K _st
STD16N65M2N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDTABSTD16N65M2 710 V 0.36 11 A Extremely low gate charge32 Excellent output capacitance (Coss) profile 1 100% avalanche tested Zener-protectedDPAKApplications Switching applicationsFig
0.4. stp16n65m2 stu16n65m2.pdf Size:818K _st
STP16N65M2, STU16N65M2N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packagesDatasheet - production dataFeaturesTABOrder code VDS @ TJmax RDS(on) max IDTABSTP16N65M2 710 V 0.36 11 ASTU16N65M2 710 V 0.36 11 A3 Extremely low gate charge23 Excellent output capacitance (Coss) profile 121 100% avalanche tested
0.5. stp16n65m5 stu16n65m5 stw16n65m5 sti16n65m5 stf16n65m5.pdf Size:1053K _st
STF16N65M5, STI16N65M5STP16N65M5,STU16N65M5,STW16N65M5N-channel 650 V, 0.240 , 12 A MDmesh V Power MOSFETin TO-220FP, TO-220, IPAK, I2PAK, TO-247FeaturesVDSS @ RDS(on) Type IDTJmax max33 322 21STF16N65M51 1TO-220STI16N65M5 TO-247 TO-220FPSTP16N65M5 710 V
0.6. stf6n65k3 stfi6n65k3 stu6n65k3.pdf Size:901K _st
STF6N65K3, STFI6N65K3, STU6N65K3N-channel 650 V, 1.1 typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAKDatasheet production dataFeaturesOrder codes VDSS RDS(on) max. ID PtotSTF6N65K3TAB30 WSTFI6N65K3 650 V
0.7. stfi6n65k3 stu6n65k3.pdf Size:901K _st
STF6N65K3, STFI6N65K3, STU6N65K3N-channel 650 V, 1.1 typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAKDatasheet production dataFeaturesOrder codes VDSS RDS(on) max. ID PtotSTF6N65K3TAB30 WSTFI6N65K3 650 V
0.8. stf6n65m2 stp6n65m2 stu6n65m2.pdf Size:732K _st
STF6N65M2, STP6N65M2, STU6N65M2N-channel 650 V, 1.2 typ., 4 A MDmesh M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packagesDatasheet - preliminary dataFeaturesTABOrder codes VDS RDS(on) max IDSTF6N65M23 3STP6N65M2 650 V 1.35 4 A2211STU6N65M2TO-220FP TO-220TAB Extremely low gate charge Excellent output capacitance (COSS) profile32 1
0.9. stl16n65m5.pdf Size:923K _st
STL16N65M5N-channel 650 V, 0.270 , 12 A PowerFLAT 8x8 HVMDmesh V Power MOSFETFeaturesVDSS @ RDS(on) Order code IDS(2) Bottom viewTJmax maxS(2)S(2)G(1)STL16N65M5 710 V
0.10. stl16n65m2.pdf Size:942K _st
STL16N65M2N-channel 650 V, 0.325 typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTL16N65M2 710 V 0.395 7.5 A Extremely low gate charge1 Excellent output capacitance (Coss) profile 234 100% avalanche tested Zener-protectedPowerFLAT 5x6 HVApplications
0.11. stw56n65m2.pdf Size:724K _st
STW56N65M2N-channel 650 V, 0.049 typ., 49 A MDmesh M2 Power MOSFET in a TO-247 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTW56N65M2 650 V 0.062 49 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested32 Zener-protected1ApplicationsTO-247 Switching applicationsFigure
Common N Channel Mosfet
0.12. stf16n65m2.pdf Size:780K _st
STF16N65M2N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTF16N65M2 710 V 0.36 11 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protectedApplicationsTO-220FP Switching applicationsFigure 1.
0.13. stw56n65m2-4.pdf Size:699K _st
STW56N65M2-4N-channel 650 V, 0.049 typ., 49 A MDmesh M2 Power MOSFET in a TO247-4 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTW56N65M2-4 650 V 0.062 49 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge4 Excellent output capacitance (Coss) profile 32 100% avalanche tes
0.14. stb6n65m2 std6n65m2.pdf Size:881K _st
STB6N65M2, STD6N65M2N-channel 650 V, 1.2 typ., 4 A MDmesh M2 Power MOSFETs in D2PAK and DPAK packagesDatasheet - preliminary dataFeaturesOrder codes VDS RDS(on) max IDSTB6N65M2650 V 1.35 4 ATAB TABSTD6N65M2313 Extremely low gate charge1DPAK2D PAK Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protectedApp
0.15. sihf6n65e.pdf Size:164K _vishay
SiHF6N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6 Reduced switching and conduction lossesQg max. (nC) 48 Ultra low gate charge (Qg)Qgs (nC) 6 Avalanche energy rated (UIS)Qgd (nC) 11 Mat
0.16. sihd6n65e.pdf Size:195K _vishay
SiHD6N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6 Reduced switching and conduction lossesQg max. (nC) 48 Ultra low gate charge (Qg)Qgs (nC) 6 Avalanche energy rated (UIS)Qgd (nC) 11 Mat
0.17. sihb6n65e.pdf Size:208K _vishay
SiHB6N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6 Reduced switching and conduction lossesQg max. (nC) 48 Ultra low gate charge (Qg)Qgs (nC) 6 Avalanche energy rated (UIS)Qgd (nC) 11 Mat
0.18. sihp6n65e.pdf Size:166K _vishay
SiHP6N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6 Reduced switching and conduction lossesQg max. (nC) 48 Ultra low gate charge (Qg)Qgs (nC) 6 Avalanche energy rated (UIS)Qgd (nC) 11 Mat
0.19. sihu6n65e.pdf Size:132K _vishay
SiHU6N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6 Reduced switching and conduction lossesQg max. (nC) 48 Ultra low gate charge (Qg)Qgs (nC) 6 Avalanche energy rated (UIS)Qgd (nC) 11 Mat
0.20. ixfh46n65x2.pdf Size:113K _ixys
Advance Technical InformationX2-Class HiPerFETTM VDSS = 650VIXFH46N65X2Power MOSFET ID25 = 46A RDS(on) 76m N-Channel Enhancement ModeAvalanche RatedTO-247Fast Intrinsic DiodeGDSymbol Test Conditions Maximum RatingsSD (Tab)VDSS TJ = 25C to 150C 650 VG = Gate D = DrainVDGR TJ = 25C to 150C, RGS = 1M 650 VS =
0.21. 6n65z.pdf Size:245K _utc
UNISONIC TECHNOLOGIES CO., LTD 6N65Z Power MOSFET 6.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switch
0.22. 6n65.pdf Size:255K _utc
UNISONIC TECHNOLOGIES CO., LTD 6N65 Power MOSFET 6.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switchin
0.23. mtn6n65fp.pdf Size:276K _cystek
Spec. No. : C597FP Issued Date : 2010.01.28 CYStech Electronics Corp.Revised Date :2012.01.13 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 1.23 (typ.) MTN6N65FP ID : 6A Description The MTN6N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-
0.24. ftp06n65 fta06n65.pdf Size:295K _inpower_semi
FTP06N65FTA06N65N-Channel MOSFETApplications:VDSS RDS(ON) (Max.) ID Adaptor650V 1.25 6.0A LCD Panel PowerFeatures: Lead Free Low ON ResistanceD Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching CurvesGGDGOrdering Information S DSPART NUMBER PACKAGE BRANDTO-220 TO-220FSFTP06N65 TO-220 FTP06N65Not to Sc
0.25. ndt6n65p.pdf Size:3425K _kexin
DIP Type MOSFETN-Channel Enhancement MOSFETNDT6N65PTO-251 Features VDS (V) = 650V1 2 3 ID = 4.8A (VGS = 10V) RDS(ON) 1.8 (VGS = 10V)D Low gate charge ( typical 16nC)1 32GSUnit: mm Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 650V Gate-Source Voltage VGS 30 Tc=25 4.8 Continuou
0.26. mdi6n65bth.pdf Size:796K _magnachip
MDI6N65B N-Channel MOSFET 650V, 5.7A, 1.45General Description Features The MDI6N65B use advanced Magnachips VDS = 650V MOSFET Technology, which provides low on-state ID = 5.7A @VGS = 10V resistance, high switching performance and RDS(ON) 1.45 @VGS = 10V excellent quality. MDI6N65B is suitable device for SMPS, HID and general purpose applications. Applicat
0.27. mdf6n65bth.pdf Size:784K _magnachip
MDF6N65B N-Channel MOSFET 650V, 6.0A, 1.45General Description Features The MDF6N65B use advanced Magnachips VDS = 650V MOSFET Technology, which provides low on-state @VGS = 10V ID = 6.0A resistance, high switching performance and @VGS = 10V RDS(ON) 1.45 excellent quality. MDF6N65B is suitable device for SMPS, HID and general purpose applications. Applications
0.28. msf6n65.pdf Size:427K _bruckewell
MSF6N65 N-Channel Enhancement Mode Power MOSFET Description The MSF6N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim
0.29. hfd6n65u.pdf Size:203K _semihow
Jan 2014BVDSS = 650 VRDS(on) typ HFD6N65U / HFU6N65U ID = 4.8 A650V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD6N65U HFU6N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC
0.30. hfp6n65u.pdf Size:201K _semihow
July 2012BVDSS = 650 VRDS(on) typ HFP6N65U ID = 6.0 A650V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area
0.31. hfs6n65u.pdf Size:306K _semihow
July 2012BVDSS = 650 VRDS(on) typ HFS6N65U ID = 6.0 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area
0.32. tmd6n65g tmu6n65g.pdf Size:603K _trinnotech
TMD6N65G/TMU6N65G Features VDSS = 715 V @Tjmax Low gate charge ID = 5.5A 100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD6N65/TMU6N65 D-PAK/I-PAK TMD6N65/TMU6N65 RoHS TMD6N65G/TMU6N65G D-PAK/I-PAK TM
0.33. tmp6n65 tmpf6n65.pdf Size:577K _trinnotech
TMP6N65/TMPF6N65 TMP6N65G/TMPF6N65G VDSS = 715 V @Tjmax Features ID = 5.5A Low gate charge RDS(on) = 1.6 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP6N65 / TMPF6N65 TO-220 / TO-220F TMP6N65 / TMPF6N65 RoHS TMP6N65G / TMPF
0.34. qm06n65f.pdf Size:350K _ubiq
QM06N65F 1 2011-04-25 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM06N65F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 1.6 6Amost of the synchronous buck converterapplications . Applications The QM06N65F meet the RoHS and
0.35. cs16n65f cs16n65p cs16n65w.pdf Size:511K _convert
nvertCS16N65F,CS16N65P,CS16N65WSuzhou Convert Semiconductor Co ., Ltd.650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS16N65F TO-220F CS1
0.36. cs6n65f cs6n65p cs6n65u cs6n65d.pdf Size:811K _convert
nvertSuzhou Convert Semiconductor Co ., Ltd.CS6N65F,CS6N65P,CS6N65U,CS6N65D650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS6N65F TO-220F
0.37. cs16n65f.pdf Size:625K _convert
nvertSuzhou Convert Semiconductor Co ., Ltd. CS16N65F650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS16N65F TO-220F CS16N65FAbsolute Max
0.38. ixfh46n65x2.pdf Size:211K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXFH46N65X2FEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
0.39. 16n65mf.pdf Size:495K _chongqing_pingwei
Mac sound effects download. 16N65MF16 Amps,650 Volts N-CHANNEL MOSFETFEATURETO-220MF 16A,650V,R =0.45@V =10V/8ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capabilityAbsolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol UNIT16N65MFDrain-Source Voltage V 650DSSVGate-Source Voltage V 30GSSContinu
Другие MOSFET.. 3N65, 3N65Z, 3N65K, 4N65, 4N65Z, 4N65K, 5N65, 5N65K, 2SK163, 5N60, 6N60, 6N60Z, 7N60A, 7N60, 7N60Z, 7N60K, 8N60.
Список транзисторов
Обновления
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02Library
Simscape / Electrical / Specialized Power Systems / Power Electronics
Description
The metal-oxide semiconductor field-effect transistor (MOSFET) is a semiconductor device controllable by the gate signal (g > 0). The MOSFET device is connected in parallel with an internal diode that turns on when the MOSFET device is reverse biased (Vds < 0) and no gate signal is applied (g=0). The model is simulated by an ideal switch controlled by a logical signal (g > 0 or g =0), with a diode connected in parallel.
The MOSFET device turns on when a positive signal is applied at the gate input (g > 0) whether the drain-source voltage is positive or negative. If no signal is applied at the gate input (g=0), only the internal diode conducts when voltage exceeds its forward voltage Vf.
With a positive or negative current flowing through the device, the MOSFET turns off when the gate input becomes 0. If the current I is negative and flowing in the internal diode (no gate signal or g = 0), the switch turns off when the current I becomes 0.
The on state voltage Vds varies:
Vds = Ron*I when a positive signal is applied at the gate input.
Vds = Rd*I-Vf +Lon*dI/dt when the antiparallel diode is conducting (no gate signal).
Connecting Two Mosfets In Series
The Lon diode inductance is available only with the continuous model. For most applications, Lon should be set to zero for both continuous and discrete models.
The MOSFET block also contains a series Rs-Cs snubber circuit that can be connected in parallel with the MOSFET (between nodes d and s).
Parameters
The internal resistance Ron, in ohms (Ω). Default is 0.1. The Resistance Ron parameter cannot be set to 0 when the Inductance Lon parameter is set to 0.
The internal inductance Lon, in henries (H). Default is 0. The Inductance Lon parameter is normally set to 0 except when the Resistance Ron parameter is set to 0.
The internal resistance of the internal diode, in ohms (Ω). Default is 0.01.
The forward voltage of the internal diode, in volts (V). Default is 0.
N Mosfet Vs P Mosfet
You can specify an initial current flowing in the MOSFET device. It is usually set to 0 in order to start the simulation with the device blocked. Default is 0.
If the Initial current IC parameter is set to a value greater than 0, the steady-state calculation considers the initial status of the MOSFET as closed. Initializing all states of a power electronic converter is a complex task. Therefore, this option is useful only with simple circuits.
The snubber resistance, in ohms (Ω). Default is 1e5. Set the Snubber resistance Rs parameter to inf to eliminate the snubber from the model.
The snubber capacitance, in farads (F). Default is inf . Set the Snubber capacitance Cs parameter to 0 to eliminate the snubber, or to inf to get a resistive snubber.
If selected, add a Simulink® output to the block returning the MOSFET current and voltage. Default is selected.
Inputs and Outputs
gSimulink signal to control the opening and closing of the MOSFET.
mThe Simulink output of the block is a vector containing 2 signals. You can demultiplex these signals by using the Bus Selector block provided in the Simulink library.
Signal | Definition | Units |
|---|---|---|
1 | MOSFET current | A |
2 | MOSFET voltage | V |
Assumptions and Limitations
The MOSFET block implements a macro model of the real MOSFET device. It does not take into account either the geometry of the device or the complex physical processes [1].
Depending on the value of the inductance Lon, the MOSFET is modeled either as a current source (Lon > 0) or as a variable topology circuit (Lon = 0). The MOSFET block cannot be connected in series with an inductor, a current source, or an open circuit, unless its snubber circuit is in use.
The inductance Lon is forced to 0 if you choose to discretize your circuit.
References
[1] Mohan, N., T.M. Undeland, and W.P. Robbins, Power Electronics: Converters, Applications, and Design, John Wiley & Sons, Inc., New York, 1995.
Two Mosfet In Series
See Also
Mosfets In Series High Voltage
Diode, GTO, Ideal Switch, Three-Level Bridge, Thyristor, Universal Bridge